Design and Simulation of a Dual Material Double Gate Tunnel Field Effect Transistor Using Tcad

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature sensitivity. In this paper a dual material gate (DMG) in a tunnel field effect transistor is proposed in order to optimize ON current and nature of output characteristics. Significant improvement is shown by a TFET if appropriate work functions are chosen for gate material on the source side and drain side. A dual material gate in double gate TFET is applied to show an overall improvement in performance. In comparison with conventional TFET, the proposed model provides a higher ON state current.